APSEMI PN

APV278WE

Circuito

1 Forma A(SPST-NO)

Descripción

SiC SSR RELAY SPST-NO 30mA 1800V, WDIP-4

Corriente de carga

30 mA

Tipo de montaje

Agujero pasante

On-State Resistance (Max)

200Ω

Tipo de salida

AC, DC

Paquete

WDIP-4

Packaging

Tube

Serie

Photo MOS Solid State Relays

Apagar

50us

Encienda

80us

Voltage-Input

1.33 ~ 1.5VDC

Tensión - Carga

0V~1800V

Specifications & Application Scenarios

Specifications: The APV278WE is a high-voltage, Silicon Carbide (SiC) based PhotoMOS solid-state relay in a WDIP-4 (Wide DIP) package. It is a 1 Form A (SPST-NO) device designed for ultra-high voltage, low-current switching, rated for 30mA at 1800V AC/DC. It features a 200惟 on-state resistance, provides 5000Vrms of robust isolation, and offers fast 80渭s/50渭s switching. Operating from -40掳C to 85掳C, it is controlled by a 1.33-1.5VDC input. Application Scenarios: This SiC relay is engineered for extreme high-voltage isolation applications requiring reliability and performance. It is ideal for medical imaging systems (CT/PET scanners), high-voltage power supplies, industrial test and measurement equipment for dielectric strength testing, X-ray generator control, and scientific instrumentation. The WDIP-4 package offers a wider pin spacing, enhancing creepage and clearance for improved high-voltage safety in through-hole designs.

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