| Model |
AC3M0025065D |
|---|---|
| Description |
SiC MOSFET N-CH 650V 98A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-3 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
98A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
25mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
106 nC |
| Input Capacitance (Ciss) |
2622 pF |
| Max Power Dissipation |
330W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0025065D is a 650V, 98A SiC MOSFET with a 25mΩ on-resistance. It operates with a +19V/-8V gate drive and has a Vgs(th) of 2.3V. The device exhibits a total gate charge of 106nC. Rated for 330W, it operates up to 175°C.
Application Scenarios: This MOSFET is a workhorse for high-current, medium-voltage applications. It is commonly used in synchronous rectification of high-power LLC converters, as the main switch in industrial battery chargers, and for motor control in electric mobility solutions.
Application Scenarios: This MOSFET is a workhorse for high-current, medium-voltage applications. It is commonly used in synchronous rectification of high-power LLC converters, as the main switch in industrial battery chargers, and for motor control in electric mobility solutions.
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