| Model |
AC3M0120065D |
|---|---|
| Beschreibung |
SiC MOSFET N-CH 650V 23A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paket |
TO-247-3 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
23A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
120mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
26 nC |
| Input Capacitance (Ciss) |
588 pF |
| Max Power Dissipation |
97W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Montageart |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120065D is a 650V, 23A SiC MOSFET with a 120mΩ on-resistance. It operates with a +19V/-8V gate drive and has a Vgs(th) of 2.3V. It features a very low total gate charge of 26nC. Rated for 97W, it operates up to 175°C.
Application Scenarios: This low-power SiC MOSFET is perfect for upgrading silicon-based designs. It is ideal for high-efficiency server fan motor drives, primary switch in high-power USB-PD adapters, and digital lighting ballasts.
Application Scenarios: This low-power SiC MOSFET is perfect for upgrading silicon-based designs. It is ideal for high-efficiency server fan motor drives, primary switch in high-power USB-PD adapters, and digital lighting ballasts.
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