WICHTIGSTE PRODUKTE
Drain to Source Voltage:
Continuous Drain Current (ID):
Gate Drive Voltage (Vgs):
Max Power Dissipation:
Package:
FET Type
Continuous Drain Current (ID)
Rds(on)
Silicon Carbide
N-Channel
1200V
94A
20V
+25V, -10V
25mΩ
2.6V
380W
TO-247-3
Silicon Carbide
N-Channel
1200V
58A
20V
+25V, -10V
44mΩ
3.2V
278W
TO-247-3
Silicon Carbide
N-Channel
1700V
78A
20V
+25V, -10V
45mΩ
2.6V
528W
TO-247-3
Silicon Carbide
N-Channel
1700V
74A
20V
+25V, -10V
45mΩ
2.7V
520W
TO-247-4
Silicon Carbide
N-Channel
1200V
36A
20V
+25V, -10V
80mΩ
2.9V
190W
TO-247-3
Silicon Carbide
N-Channel
1200V
18A
20V
+25V, -10V
160mΩ
2.9V
124W
TO-247-3
Silicon Carbide
N-Channel
1200V
11A
20V
+25V, -10V
320mΩ
3.1V
69W
TO-247-3
Silicon Carbide
N-Channel
1700V
6A
20V
+25V, -10V
800mΩ
2.8V
69W
TO-247-3
Silicon Carbide
N-Channel
650V
122A
15V
-8V, +19V
15mΩ
2.4V
420W
TO-247-3
Silicon Carbide
N-Channel
650V
122A
15V
-8V, +19V
15mΩ
2.3V
420W
TO-247-4
Silicon Carbide
N-Channel
1200V
117A
15V
-8V, +19V
16mΩ
2.5V
556W
TO-247-3
Silicon Carbide
N-Channel
1200V
117A
15V
-8V, +19V
16mΩ
2.9V
555W
TO-247-3
ADRESSE:
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TEL:
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-Mail:
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