PRINCIPAUX PRODUITS
Drain to Source Voltage:
Continuous Drain Current (ID):
Gate Drive Voltage (Vgs):
Max Power Dissipation:
Package:
FET Type
Continuous Drain Current (ID)
Rds(on)
Silicon Carbide
N-Channel
1200V
18A
20V
+25V, -10V
160mΩ
2.9V
124W
TO-247-3
ADDRESS:
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine
TEL:
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail:
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
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