| Modèle | AC2M0045170D |
|---|---|
| Description | SiC MOSFET N-CH 1700V 78A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Paquet | TO-247-3 |
| Drain to Source Voltage | 1700V |
| Continuous Drain Current (ID) | 78A |
| Gate Drive Voltage (Vgs) | 20V |
| Vgs (Max) | +25V, -10V |
| Rds(on) | 45mΩ |
| Vgs(th) | 2.6V |
| Gate Charge (Qg) | 186 nC |
| Input Capacitance (Ciss) | 3617 pF |
| Max Power Dissipation | 528W |
| Operating Temperature (°C) | -40 ~ 150 |
| Type de montage | Trou de passage |
Specifications & Application Scenarios
Specifications: The AC2M0045170D is an ultra-high-voltage SiC MOSFET rated for 1700V and 78A. It achieves a low on-resistance of 45mΩ at this voltage class. Utilizing a 20V gate drive (+25V/-10V max), it has a Vgs(th) of 2.6V. The device exhibits a gate charge of 186nC and a high input capacitance. It boasts a substantial 528W power dissipation capability and operates from -40°C to 150°C.
Application Scenarios: Designed for the most demanding high-voltage infrastructures, this MOSFET is critical for 1500V photovoltaic string and central inverters in solar farms. It is also essential for traction inverters in electric buses and trains, solid-state transformers (SST) in smart grids, and high-power X-ray generator power supplies.
Application Scenarios: Designed for the most demanding high-voltage infrastructures, this MOSFET is critical for 1500V photovoltaic string and central inverters in solar farms. It is also essential for traction inverters in electric buses and trains, solid-state transformers (SST) in smart grids, and high-power X-ray generator power supplies.
Produits apparentés
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