| Modelo |
AC2M0045170D |
|---|---|
| Descripción |
SiC MOSFET N-CH 1700V 78A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paquete |
TO-247-3 |
| Drain to Source Voltage |
1700V |
| Continuous Drain Current (ID) |
78A |
| Gate Drive Voltage (Vgs) |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds(on) |
45mΩ |
| Vgs(th) |
2.6V |
| Gate Charge (Qg) |
186 nC |
| Input Capacitance (Ciss) |
3617 pF |
| Max Power Dissipation |
528W |
| Operating Temperature (°C) |
-40 ~ 150 |
| Tipo de montaje |
Agujero pasante |
Specifications & Application Scenarios
Specifications: The AC2M0045170D is an ultra-high-voltage SiC MOSFET rated for 1700V and 78A. It achieves a low on-resistance of 45mΩ at this voltage class. Utilizing a 20V gate drive (+25V/-10V max), it has a Vgs(th) of 2.6V. The device exhibits a gate charge of 186nC and a high input capacitance. It boasts a substantial 528W power dissipation capability and operates from -40°C to 150°C.
Application Scenarios: Designed for the most demanding high-voltage infrastructures, this MOSFET is critical for 1500V photovoltaic string and central inverters in solar farms. It is also essential for traction inverters in electric buses and trains, solid-state transformers (SST) in smart grids, and high-power X-ray generator power supplies.
Application Scenarios: Designed for the most demanding high-voltage infrastructures, this MOSFET is critical for 1500V photovoltaic string and central inverters in solar farms. It is also essential for traction inverters in electric buses and trains, solid-state transformers (SST) in smart grids, and high-power X-ray generator power supplies.
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