МодельAC2M0045170D
ОписаниеSiC MOSFET N-CH 1700V 78A TO-247-3
TechnologySilicon Carbide
FET TypeN-Channel
ПакетTO-247-3
Drain to Source Voltage1700V
Continuous Drain Current (ID)​78A
Gate Drive Voltage (Vgs)20V
Vgs (Max)+25V, -10V
Rds(on)45mΩ
Vgs(th)2.6V
Gate Charge (Qg)186 nC
Input Capacitance (Ciss)3617 pF
Max Power Dissipation528W
Operating Temperature (°C)-40 ~ 150
Тип крепленияThrough Hole

Specifications & Application Scenarios

Specifications: The AC2M0045170D is an ultra-high-voltage SiC MOSFET rated for 1700V and 78A. It achieves a low on-resistance of 45mΩ at this voltage class. Utilizing a 20V gate drive (+25V/-10V max), it has a Vgs(th) of 2.6V. The device exhibits a gate charge of 186nC and a high input capacitance. It boasts a substantial 528W power dissipation capability and operates from -40°C to 150°C.

Application Scenarios: Designed for the most demanding high-voltage infrastructures, this MOSFET is critical for 1500V photovoltaic string and central inverters in solar farms. It is also essential for traction inverters in electric buses and trains, solid-state transformers (SST) in smart grids, and high-power X-ray generator power supplies.

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