WICHTIGSTE PRODUKTE
| Model |
AC2M0280120D |
|---|---|
| Beschreibung |
SiC MOSFET N-CH 1200V 11A TO-247-3 |
| Serie |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
11A |
| Drive Voltage |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds On |
320mΩ |
| Vgs(th) |
3.1V |
| Gate Charge (Qg) |
17 nC |
| Input Capacitance (Ciss) |
210 pF |
| Power Dissipation |
69W |
| Betriebstemperatur (℃) |
-55°C ~ 150°C |
| Montageart |
Through Hole |
| Paket |
TO-247-3 |
Specifications & Application Scenarios
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