Model

AC2M0040120D

Beschreibung

SiC MOSFET N-CH 1200V 58A TO-247-3

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

58A

Drive Voltage

20V

Vgs (Max)

+25V, -10V

Rds On

44mΩ

Vgs(th)

3.2V

Gate Charge (Qg)

118 nC

Input Capacitance (Ciss)

2386 pF

Power Dissipation

278W

Betriebstemperatur (℃)

-55°C ~ 150°C

Montageart

Through Hole

Paket

TO-247-3

Specifications & Application Scenarios

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