Model

AC2M0025120D

Description

SiC MOS (Silicon Carbide)AC2M0025120D 1200V 90A

FET Type

N-Channel

Series

Silicon Carbide

DrainVoltage(Vdss)

1200V

Current

90A

Drive Voltage

20V

Vgs (Max)

+25V, -10V

Rds On

25mΩ

Vgs(th)

2.4V

Gate Charge (Qg)

161 nC

Input Capacitance (Ciss)

2788 pF

Power Dissipation

463W

Operating Temperature (℃)

-55°C ~ 150°C

Mounting Type

Through Hole

Package

TO-247-3

Mounting Type

Related products

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