الطرازAC2M004012020D
الوصفSiC MOSFET N-CH 1200V 58A TO-247-3
TechnologySilicon Carbide
FET TypeN-Channel
الحزمةتو-247-3
Drain to Source Voltage1200V
Continuous Drain Current (ID)​58A
Gate Drive Voltage (Vgs)20V
Vgs (Max)+25V, -10V
Rds(on)44mΩ
Vgs(th)3.2V
Gate Charge (Qg)118 nC
سعة الإدخال (Ciss)2386 pF
Max Power Dissipation278W
Operating Temperature (°C)-55 ~ 150
نوع التركيبThrough Hole

Specifications & Application Scenarios

Specifications: The AC2M0040120D is a 1200V, 58A SiC MOSFET in a TO-247-3 package. It offers a typical on-resistance of 44mΩ. The device operates with a 20V gate drive signal, within safe limits of +25V and -10V, and has a gate threshold voltage of 3.2V. Its total gate charge is 118nC with an input capacitance of 2386pF. It can dissipate up to 278W of power and is specified for operation from -55°C to 150°C.

Application Scenarios: This component provides a balanced solution for medium-to-high power 1200V applications. It is well-suited for power factor correction (PFC) circuits in industrial motor drives and welding equipment, as the primary switch in medium-power uninterruptible power supplies (UPS), and for motor control in high-performance HVAC systems and appliances.

المنتجات ذات الصلة

العنوان::

17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين

تل :

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

البريد الإلكتروني:البريد الإلكتروني

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

©2026 APSEMI co.,ltd.