الطراز

AC2M004012020D

الوصف

SiC MOSFET N-CH 1200V 58A TO-247-3

Technology

Silicon Carbide

FET Type

N-Channel

الحزمة

تو-247-3

Drain to Source Voltage

1200V

Continuous Drain Current (ID)​

58A

Gate Drive Voltage (Vgs)

20V

Vgs (Max)

+25V, -10V

Rds(on)

44mΩ

Vgs(th)

3.2V

Gate Charge (Qg)

118 nC

سعة الإدخال (Ciss)

2386 pF

Max Power Dissipation

278W

Operating Temperature (°C)

-55 ~ 150

نوع التركيب

Through Hole

Specifications & Application Scenarios

Specifications: The AC2M0040120D is a 1200V, 58A SiC MOSFET in a TO-247-3 package. It offers a typical on-resistance of 44mΩ. The device operates with a 20V gate drive signal, within safe limits of +25V and -10V, and has a gate threshold voltage of 3.2V. Its total gate charge is 118nC with an input capacitance of 2386pF. It can dissipate up to 278W of power and is specified for operation from -55°C to 150°C.

Application Scenarios: This component provides a balanced solution for medium-to-high power 1200V applications. It is well-suited for power factor correction (PFC) circuits in industrial motor drives and welding equipment, as the primary switch in medium-power uninterruptible power supplies (UPS), and for motor control in high-performance HVAC systems and appliances.

المنتجات ذات الصلة

العنوان::

17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين

تل :

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