WICHTIGSTE PRODUKTE
Drain to Source Voltage:
Continuous Drain Current (ID):
Gate Drive Voltage (Vgs):
Max Power Dissipation:
Package:
FET Type
Continuous Drain Current (ID)
Rds(on)
Silicon Carbide
N-Channel
1000V
33A
15V
+19V, -8V
65mΩ
2.1V
115W
TO-247-4
Silicon Carbide
N-Channel
1200V
33A
15V
+19V, -8V
75mΩ
2.5V
136W
TO-247-3
Silicon Carbide
N-Channel
1200V
33A
15V
+19V, -8V
75mΩ
2.5V
136W
TO-247-4
Silicon Carbide
N-Channel
1000V
24A
15V
-8V, +19V
120mΩ
2.1V
92W
TO-247-4
Silicon Carbide
N-Channel
1200V
18A
15V
-8V, +19V
160mΩ
2.8V
98W
TO-247-3
ADRESSE:
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TEL:
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-Mail:
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
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