Model

AC3M0065100K

Beschreibung

SiC MOSFET N-CH 1000V 33A TO-247-4

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

1000V

Current

33A

Drive Voltage

15V

Vgs (Max)

+19V, -8V

Rds On

65mΩ

Vgs(th)

2.1V

Gate Charge (Qg)

33 nC

Input Capacitance (Ciss)

710 pF

Power Dissipation

115W

Betriebstemperatur (℃)

-55°C ~ 150°C

Montageart

Through Hole

Paket

TO-247-4

Specifications & Application Scenarios

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