Model

AC3M0075120D

Beschreibung

SiC MOSFET N-CH 1200V 33A TO-247-3

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

33A

Drive Voltage

15V

Vgs (Max)

+19V, -8V

Rds On

75mΩ

Vgs(th)

2.5V

Gate Charge (Qg)

55 nC

Input Capacitance (Ciss)

1305 pF

Power Dissipation

136W

Betriebstemperatur (℃)

-40°C ~ 175°C

Montageart

Through Hole

Paket

TO-247-3

Specifications & Application Scenarios

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