Model

AC3M0350120D

Beschreibung

SiC MOSFET N-CH 1200V 8A TO-247-3

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

8A

Drive Voltage

15V

Vgs (Max)

-8V, +19V

Rds On

350mΩ

Vgs(th)

2.5V

Gate Charge (Qg)

19 nC

Input Capacitance (Ciss)

297 nC

Power Dissipation

52W

Betriebstemperatur (℃)

-55°C ~ 150°C

Montageart

Through Hole

Paket

TO-247-3

Specifications & Application Scenarios

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