WICHTIGSTE PRODUKTE
Drain to Source Voltage:
Continuous Drain Current (ID):
Gate Drive Voltage (Vgs):
Max Power Dissipation:
Package:
FET Type
Continuous Drain Current (ID)
Rds(on)
Silicon Carbide
N-Channel
1200V
82A
15V
-8V, +19V
21mΩ
2.5V
472W
TO-247-3
Silicon Carbide
N-Channel
1200V
102A
15V
-8V, +19V
21mΩ
2.5V
472W
TO-247-4
Silicon Carbide
N-Channel
900V
74A
15V
-8V, +19V
30mΩ
2.4V
243 W
TO-247-4
Silicon Carbide
N-Channel
1200V
64A
15V
+15V, -4V
32mΩ
2.5V
288W
TO-247-3
Silicon Carbide
N-Channel
1200V
64A
15V
+15V, -4V
32mΩ
2.5V
288W
TO-247-4
Silicon Carbide
N-Channel
1200V
67A
15V
-8V, +19V
40mΩ
2.7V
330W
TO-247-3
Silicon Carbide
N-Channel
1200V
67A
15V
-8V, +19V
40mΩ
2.7V
330W
TO-247-4
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+86-755-83-666-557
+86-755-83-666-558
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