WICHTIGSTE PRODUKTE
| Model |
AC3M0021120D |
|---|---|
| Beschreibung |
SiC MOSFET N-CH 1200V 82A TO-247-3 |
| Serie |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
82A |
| Drive Voltage |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds On |
21mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
158 nC |
| Input Capacitance (Ciss) |
4620 pF |
| Power Dissipation |
472W |
| Betriebstemperatur (℃) |
-40°C ~ 175°C |
| Montageart |
Through Hole |
| Paket |
TO-247-3 |
Specifications & Application Scenarios
Ähnliche Produkte
ADRESSE：
17F, North Industrial Building, Nr. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-Mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD