| Model |
AC3M0021120D |
|---|---|
| 说明 |
SiC MOSFET N-CH 1200V 82A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| 包装 |
TO-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
82A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
21mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
158 nC |
| Input Capacitance (Ciss) |
4620 pF |
| Max Power Dissipation |
472W |
| Operating Temperature (°C) |
-40 ~ 175 |
| 安装类型 |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0021120D is a 1200V, 82A SiC MOSFET with a 21mΩ on-resistance. Designed for a 15V gate drive, it has a Vgs(th) of 2.5V. Its total gate charge is 158nC. With a 472W power rating and operation up to 175°C, it is built for demanding high-power environments.
Application Scenarios: This MOSFET offers a versatile solution for 1200V applications. It is an excellent choice for power switches in three-level inverters for industrial drives/UPS, the primary side of dual-active-bridge (DAB) converters, and main switching elements in high-power induction heating equipment.
Application Scenarios: This MOSFET offers a versatile solution for 1200V applications. It is an excellent choice for power switches in three-level inverters for industrial drives/UPS, the primary side of dual-active-bridge (DAB) converters, and main switching elements in high-power induction heating equipment.
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