| Model | AC3M0060065D |
|---|---|
| Beschreibung | SiC MOSFET N-CH 650V 38A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Paket | TO-247-3 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 38A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 60mΩ |
| Vgs(th) | 2.3V |
| Gate Charge (Qg) | 43 nC |
| Input Capacitance (Ciss) | 975 pF |
| Max Power Dissipation | 150W |
| Operating Temperature (°C) | -40 ~ 175 |
| Montageart | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0060065D is a 650V, 38A SiC MOSFET with a 60mΩ on-resistance. It operates with a 15V/-8V gate signal and has a Vgs(th) of 2.3V. The device features a low total gate charge of 43nC. Rated for 150W, it operates up to 175°C.
Application Scenarios: This MOSFET is a great choice for performance and cost balance. It is suitable for solar power optimizers, primary side of high-power adapters, and motor control in power tools and small appliances.
Application Scenarios: This MOSFET is a great choice for performance and cost balance. It is suitable for solar power optimizers, primary side of high-power adapters, and motor control in power tools and small appliances.
Ähnliche Produkte
ADRESSE：
17F, North Industrial Building, Nr. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-Mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD