| Model |
AC3M0025065K |
|---|---|
| Beschreibung |
SiC MOSFET N-CH 650V 98A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paket |
TO-247-4 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
98A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
25mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
110 nC |
| Input Capacitance (Ciss) |
2622 pF |
| Max Power Dissipation |
330W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Montageart |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0025065K is the TO-247-4 Kelvin source counterpart. It maintains the 25mΩ on-resistance and 330W rating. The separate gate return path minimizes parasitic inductance for cleaner and faster switching.
Application Scenarios: This package is selected for highest switching performance. It is ideal for multi-phase interleaved boost converters, high-frequency DC-DC converters for point-of-load applications, and circuits where multiple MOSFETs are paralleled for higher current.
Application Scenarios: This package is selected for highest switching performance. It is ideal for multi-phase interleaved boost converters, high-frequency DC-DC converters for point-of-load applications, and circuits where multiple MOSFETs are paralleled for higher current.
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