| Model | AC3M0120100K |
|---|---|
| Beschreibung | SiC MOSFET N-CH 1000V 24A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Paket | TO-247-4 |
| Drain to Source Voltage | 1000V |
| Continuous Drain Current (ID) | 24A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 120mΩ |
| Vgs(th) | 2.1V |
| Gate Charge (Qg) | 20 nC |
| Input Capacitance (Ciss) | 366 pF |
| Max Power Dissipation | 92W |
| Operating Temperature (°C) | -55 ~ 150 |
| Montageart | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120100K is a 1000V, 24A SiC MOSFET in a TO-247-4 Kelvin source package. It maintains a 120mΩ on-resistance and a 20nC gate charge. Rated for 92W, it operates from -55°C to 150°C.
Application Scenarios: The combination of 1000V blocking, fast switching, and optimized package makes this a specialized component. It is perfect for high-side switch in half-bridge configurations for 800V systems, RF power amplifier modulation, and scientific instrumentation.
Application Scenarios: The combination of 1000V blocking, fast switching, and optimized package makes this a specialized component. It is perfect for high-side switch in half-bridge configurations for 800V systems, RF power amplifier modulation, and scientific instrumentation.
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