HOME / PRODUKT / FOTO DMOSRELAY / APV217G2E
APSEMI PN

APV217G2E

Schaltung

1 Form A(SPST-NO)

Beschreibung

SSR RELAY SPST-NO 2A 150V, DIP-6

Laststrom

2.0A

Montageart

Through Hole

Durchgangswiderstand (Max)

0.12Ω

Ausgangstyp

AC, DC

Paket

DIP-6

Verpackung

Tube

Serie

Photo-MOS-Solid-State-Relais

Ausschalten

350us

Einschalten

250us

Spannungseingang

1.2 ~ 1.4VDC

Spannung - Last

0V~150V

Specifications & Application Scenarios

Specifications: The APV217G2E is a high-current, low-loss PhotoMOS SSR in a DIP-6 package. This 1 Form A (SPST-NO) device is rated for 2.0A at 150V AC/DC. It features an ultra-low 0.12惟 on-state resistance, provides 5000Vrms isolation, and switches with 250渭s (on) and 350渭s (off) times. It operates from -40掳C to 85掳C with 1.2-1.4VDC input. Application Scenarios: Engineered for high-efficiency switching of substantial loads. Perfect for driving high-power solenoids, contactors, small motors, or LED arrays in industrial automation, power management systems, stage lighting, and automotive test benches. The low on-resistance minimizes heat, and the DIP package facilitates good thermal performance in high-current applications.

Ähnliche Produkte

ADRESSE:

17F, North Industrial Building, Nr. 3003 Shennan Road, Futian District, Shenzhen, China

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-Mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

©2026 APSEMI CO.,LTD