| Modelo |
AC3M0045065K |
|---|---|
| Descripción |
SiC MOSFET N-CH 650V 50A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paquete |
TO-247-4 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
50A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
45mΩ |
| Vgs(th) |
2.6V |
| Gate Charge (Qg) |
61 nC |
| Input Capacitance (Ciss) |
1520 pF |
| Max Power Dissipation |
178W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Tipo de montaje |
Agujero pasante |
Specifications & Application Scenarios
Specifications: The AC3M0045065K is the TO-247-4 Kelvin source variant. It shares the 45mΩ on-resistance and 178W rating. The improved gate drive integrity is valuable for high-frequency or noisy environments.
Application Scenarios: The 4-pin version is beneficial for very high switching frequencies. It is ideal for high-frequency resonant converters for wireless charging, compact point-of-load (PoL) converters, and envelope tracking power supplies for RF amplifiers.
Application Scenarios: The 4-pin version is beneficial for very high switching frequencies. It is ideal for high-frequency resonant converters for wireless charging, compact point-of-load (PoL) converters, and envelope tracking power supplies for RF amplifiers.
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