APSEMI PN

APV251G4E

Circuito

1 Forma A(SPST-NO)

Descripción

SSR RELAY SPST-NO 4.5A 40V, DIP-6

Corriente de carga

4.5A

Tipo de montaje

Agujero pasante

On-State Resistance (Max)

33mΩ

Tipo de salida

AC, DC

Paquete

DIP-6

Packaging

Tube

Serie

Photo MOS Solid State Relays

Apagar

50us

Voltage-Input

1.3 ~ 1.5VDC

Tensión - Carga

0V~40V

Specifications & Application Scenarios

Specifications: The APV251G4E is the through-hole DIP-6 version of an ultra-high-current PhotoMOS SSR. It is a 1 Form A (SPST-NO) relay capable of handling 4.5A at 40V AC/DC. Its defining characteristic is an exceptionally low 33mΩ on-state resistance. It provides 5000Vrms isolation and has a turn-off time of 50μs. (Note: Turn-on time is not specified in the provided data). It operates from -40°C to 85℃ with a 1.3-1.5VDC input. Application Scenarios: Designed for the highest current density switching in a through-hole package. Ideal for driving very high-current loads in industrial automation panels, power tool controls, electric vehicle auxiliary systems, server power distribution, and welding equipment control, where the ultra-low Rds(on) ensures cool operation and the DIP package facilitates heat sinking and robust connections.

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DIRECCIÓN:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

Correo electrónico:

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sales@a-semi.com
design@a-semi.com

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