Specifications: The APV258BEH is the SMD-5 version of a high-voltage SiC PhotoMOS SSR. This SPST-NO device handles 30mA at 1700V AC/DC, with 120惟 on-state resistance. It provides 5000Vrms isolation and 80渭s/50渭s switching. Operating from -40掳C to 85掳C, it uses 1.33-1.5VDC for control. Application Scenarios: Designed for the same extreme high-voltage applications as the DIP version but in a surface-mount package for automated assembly. It is ideal for next-generation compact medical imaging systems, portable high-voltage test instruments, and miniaturized power supplies where SiC performance, high isolation, and a small footprint are essential.