| Modèle |
AC3M0040120K |
|---|---|
| Description |
SiC MOSFET N-CH 1200V 67A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paquet |
TO-247-4 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
67A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
40mΩ |
| Vgs(th) |
2.7V |
| Gate Charge (Qg) |
95 nC |
| Input Capacitance (Ciss) |
2820 pF |
| Max Power Dissipation |
330W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Type de montage |
Trou de passage |
Specifications & Application Scenarios
Specifications: The AC3M0040120K is the Kelvin source TO-247-4 packaged version, maintaining identical electrical specs. The separate source pin optimizes high-frequency switching characteristics.
Application Scenarios: This package is chosen for highest switching speed and lowest loss. It is suitable for high-frequency DC-DC converters in aerospace, fast protection switches in battery test equipment, and advanced digital power amplifiers.
Application Scenarios: This package is chosen for highest switching speed and lowest loss. It is suitable for high-frequency DC-DC converters in aerospace, fast protection switches in battery test equipment, and advanced digital power amplifiers.
Produits apparentés
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