| Modèle |
AC4D12120A |
|---|---|
| Description |
SIC SCHOTTKY DIODES,1200V,12A,TO-220-2 |
| Technology |
SiC (Silicon Carbide) Schottky |
| Paquet |
TO-220-2 |
| Reverse Voltage (Vrrm) | |
| Continuous Forward Current (IF) | |
| Forward Voltage (VF) |
1.35 V |
| Max Power Dissipation |
166.5 W |
| Capacitance Charge (QC) |
52 nC |
| Operating Temperature (°C) |
-55°C ~ 175°C |
| Type de montage |
Trou de passage |
Specifications & Application Scenarios
Specifications: The AC4D12120A is a 12A, 1200V SiC Schottky diode in TO-220-2. It features a low V_F of 1.35V, P_TOT of 166.5W, and Q_C of 52nC. The low V_F is notable for reducing conduction losses.
Application Scenarios: For applications where conduction loss is critical. Ideal in high-duty-cycle circuits like certain PFC stages and DC/DC converters. Maximizes system efficiency.
Produits apparentés
ADDRESS：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD