Modèle

AC4D60120D

Description

SIC SCHOTTKY DIODES,1200V,60A,TO-247-3

Technology

SiC (Silicon Carbide) Schottky

Paquet

TO-247-3

Reverse Voltage (Vrrm)

Forward Voltage (VF)

1.5 V

Max Power Dissipation

626 W

Capacitance Charge (QC)

97 nC

Operating Temperature (°C)

-55°C ~ 175°C

Type de montage

Trou de passage

Specifications & Application Scenarios

Specifications: The AC4D60120D is a high-power 1200V, 60A SiC Schottky diode in TO-247-3. Key specs: V_F=1.5V, P_TOT=626W, Q_C=97nC. It maintains zero reverse recovery at high voltage/current, enabling efficient high-frequency switching. Application Scenarios: Targeted for high-power energy conversion. Essential in 3-phase solar inverters (10-30kW), ESS bidirectional converters, and fast EV charging stations. Its 1200V rating is perfect for 800V bus systems in electric vehicles and industrial equipment, reducing system size and cooling requirements.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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