APSEMI PN

APV258AE

Circuit

1 Forme A (SPST-NO)

Description

SiC SSR RELAY SPST-NO 45mA 1500V, DIP-6

Courant de charge

45mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

180Ω

Type de sortie

AC, DC

Paquet

DIP-6

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

50us

Mise en marche

80us

Entrée tension

1.1 ~ 1.5VDC

Tension - Charge

0V~1500V

Specifications & Application Scenarios

Specifications: The APV258AE is a high-voltage Silicon Carbide (SiC) PhotoMOS SSR in a DIP-6 through-hole package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1500V AC/DC with a 45mA current rating. It has an 180Ω on-state resistance, provides 2500Vrms isolation, and switches in 80μs (on) and 50μs (off). It is designed for harsh environments with an operating range of -40°C to 85℃ and is controlled by 1.1-1.5VDC. Application Scenarios: Targeting high-voltage, low-current applications requiring SiC reliability and through-hole mounting. Ideal for medical diagnostic equipment, industrial high-voltage test and measurement instruments, power supply modules, and motor drives where high-voltage isolation and long-term stability are critical, and where the DIP package is preferred for development or serviceability.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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