APSEMI PN

APW226AE

Circuit

2 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 300mA 600V, DIP-8

Courant de charge

300mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

3.15Ω

Type de sortie

AC, DC

Paquet

DIP-8

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

40us

Mise en marche

800us

Entrée tension

1.2 ~ 1.5VDC

Tension - Charge

0V~600V

Specifications & Application Scenarios

Specifications: The APW226AE is a dual-channel (2 Form A), high-voltage PhotoMOS SSR in a DIP-8 through-hole package. Each channel is a 1 Form A (SPST-NO) switch capable of handling 300mA at up to 600V AC/DC. Each channel features a low 3.15Ω on-state resistance, provides high 5000Vrms isolation, and has switching characteristics of 800μs (turn-on) and 40μs (turn-off). It operates reliably from -40°C to 85℃ with a 1.2-1.5VDC control input. Application Scenarios: Designed for dual-channel switching of medium-current, high-voltage circuits in applications that benefit from through-hole technology. Ideal for dual-output high-voltage power supplies, industrial dielectric test equipment, electrostatic application controllers, scientific instrument biasing circuits, and any system requiring two independent, reliable high-voltage channels with good current-handling capability.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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