APSEMI PN

APW252G1E

Circuit

2 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 1.1A 60V, DIP-8

Courant de charge

1.1A

Type de montage

Trou de passage

Résistance à l'état passant (Max)

0.27Ω

Type de sortie

AC, DC

Paquet

DIP-8

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

50us

Mise en marche

1500us

Entrée tension

1.2 ~ 1.4VDC

Tension - Charge

0V~60V

Specifications & Application Scenarios

Specifications: The APW252G1E is a dual-channel (2 Form A) PhotoMOS SSR in a DIP-8 through-hole package. Each channel is a 1 Form A (SPST-NO) switch rated for 1.1A at 60V AC/DC. Each channel features a very low 0.27Ω on-state resistance, provides 5000Vrms isolation, and switches with 1500μs (on) and 50μs (off) times. It operates from -40°C to 85℃ with 1.2-1.4VDC control. Application Scenarios: Engineered for efficient dual-channel medium-current switching. Ideal for applications such as driving two high-current LEDs or small motors, redundant power path control in critical systems, battery charger control circuits, and as a high-efficiency switch in industrial I/O modules and power controllers, where the low on-resistance minimizes heat generation and the DIP package aids thermal management and reliability.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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