APSEMI PN

APY210E

Série

Relais à semi-conducteurs Photo MOS

Circuit

1 Forme A (SPST-NO)

Description

APY210E 1 Form A(SPST-NO) Voltage – Load:350V Load Current:130mA

Courant de charge

130mA

Tension - Charge

0V~350V

Résistance à l'état passant (Max)

17Ω

Tension d'isolement (rms)

5000V

Type de sortie

AC,DC

Paquet

DIP-4

Topr (Min~Max) (degC)

‘-40~85 ℃

Entrée tension

1.2V

Mise en marche

230us

Mise hors tension

50us

Type de montage

Trou de passage

Emballage

DIP-4

Specifications & Application Scenarios

Specifications
The APY211G3E is a high-current Photo MOS Solid State Relay designed for reliable, isolated switching in medium-power applications. It features a robust 2.5A load current capability at up to 40V, with ultra-low on-state resistance of 55mΩ, minimizing conduction losses and thermal stress. The device offers 5000Vrms isolation voltage, ensuring safe separation between control and load circuits. With a fast turn-off time of 20μs and a turn-on time of 800μs, it is optimized for applications requiring rapid deactivation. Operating from -40°C to 85°C, it supports industrial and automotive environments. Input voltage is 1.2–1.4VDC, compatible with standard logic levels. Housed in a compact DIP-4 through-hole package, it is ideal for PCB-mounted systems.
Applications
Suitable for driving solenoids, relays, small motors, and LED arrays in industrial automation, power management, and automotive electronics. Also used in test equipment and communication systems for efficient, noise-free load switching.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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