| Model | AC2M0080120D |
|---|---|
| Description | SiC MOSFET N-CH 1200V 36A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 36A |
| Gate Drive Voltage (Vgs) | 20V |
| Vgs (Max) | +25V, -10V |
| Rds(on) | 80mΩ |
| Vgs(th) | 2.9V |
| Gate Charge (Qg) | 69 nC |
| Input Capacitance (Ciss) | 1075 pF |
| Max Power Dissipation | 190W |
| Operating Temperature (°C) | -55 ~ 150 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC2M0080120D is a 1200V, 36A SiC MOSFET with an on-resistance of 80mΩ. It is designed for a 20V gate drive with Vgs(max) ratings of +25V/-10V. The gate threshold voltage is 2.9V. It exhibits favorable switching parameters with a total gate charge of 69nC and an input capacitance of 1075pF. The device can dissipate 190W and operates from -55°C to 150°C.
Application Scenarios: This versatile MOSFET is suitable for a wide array of medium-power 1200V applications. It is commonly employed in solar microinverters, as the primary switch in flyback converters for auxiliary power supplies, in high-voltage LED driver circuits, and in automotive onboard systems.
Application Scenarios: This versatile MOSFET is suitable for a wide array of medium-power 1200V applications. It is commonly employed in solar microinverters, as the primary switch in flyback converters for auxiliary power supplies, in high-voltage LED driver circuits, and in automotive onboard systems.
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