| Model | AC2M0280120D |
|---|---|
| Description | SiC MOSFET N-CH 1200V 11A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 11A |
| Gate Drive Voltage (Vgs) | 20V |
| Vgs (Max) | +25V, -10V |
| Rds(on) | 320mΩ |
| Vgs(th) | 3.1V |
| Gate Charge (Qg) | 17 nC |
| Input Capacitance (Ciss) | 210 pF |
| Max Power Dissipation | 69W |
| Operating Temperature (°C) | -55 ~ 150 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC2M0280120D is a 1200V, 11A SiC MOSFET with a 320mΩ on-resistance. Designed for 20V gate drive, it has Vgs(max) of +25V/-10V and a Vgs(th) of 3.1V. A key advantage is its extremely low gate charge of 17nC and minimal input capacitance of 210pF. The device has a 69W power rating and operates from -55°C to 150°C.
Application Scenarios: This MOSFET is optimized for high-frequency, high-voltage switching at lower power. It is well-suited for resonant gate drive circuits, for the main switch in high-voltage, low-power isolated DC-DC converters, and in precision pulsed power applications like laser drivers.
Application Scenarios: This MOSFET is optimized for high-frequency, high-voltage switching at lower power. It is well-suited for resonant gate drive circuits, for the main switch in high-voltage, low-power isolated DC-DC converters, and in precision pulsed power applications like laser drivers.
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