| Model |
AC3M0030090K |
|---|---|
| Description |
SiC MOSFET N-CH 900V 74A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-4 |
| Drain to Source Voltage |
900V |
| Continuous Drain Current (ID) |
74A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
30mΩ |
| Vgs(th) |
2.4V |
| Gate Charge (Qg) |
72 nC |
| Input Capacitance (Ciss) |
1358 pF |
| Max Power Dissipation |
243 W |
| Operating Temperature (°C) |
-40 ~ 150 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0030090K is a 900V, 74A SiC MOSFET in a TO-247-4 Kelvin source package. It features a 30mΩ on-resistance and a low total gate charge of 72nC. It is rated for 243W and operates from -40°C to 150°C.
Application Scenarios: This device bridges 650V and 1200V parts, ideal for 800V bus architectures in EVs. It is suited for main switches in onboard chargers (OBC) and DC-DC converters for 800V EV platforms, and for medium-voltage industrial motor drives.
Application Scenarios: This device bridges 650V and 1200V parts, ideal for 800V bus architectures in EVs. It is suited for main switches in onboard chargers (OBC) and DC-DC converters for 800V EV platforms, and for medium-voltage industrial motor drives.
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