| Model |
AC3M0040120D |
|---|---|
| Description |
SiC MOSFET N-CH 1200V 67A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
67A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
40mΩ |
| Vgs(th) |
2.7V |
| Gate Charge (Qg) |
95 nC |
| Input Capacitance (Ciss) |
2820 pF |
| Max Power Dissipation |
330W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0040120D is a 1200V, 67A SiC MOSFET with a 40mΩ on-resistance. It operates with a 15V/-8V gate drive and has a Vgs(th) of 2.7V. The total gate charge is 95nC. It is rated for 330W and operates up to 175°C.
Application Scenarios: This MOSFET provides a balanced solution for 1200V power conversion. It is employed in medium-power solar inverters, power stages of industrial UPS systems, and as the switching element in high-power LED drivers and theater lighting.
Application Scenarios: This MOSFET provides a balanced solution for 1200V power conversion. It is employed in medium-power solar inverters, power stages of industrial UPS systems, and as the switching element in high-power LED drivers and theater lighting.
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