| Model |
AC3M0120065K |
|---|---|
| Description |
SiC MOSFET N-CH 650V 23A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-4 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
23A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
120mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
26 nC |
| Input Capacitance (Ciss) |
588 pF |
| Max Power Dissipation |
97W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120065K is the TO-247-4 packaged version. It shares the 120mΩ on-resistance, 26nC gate charge, and 97W rating. The Kelvin source ensures optimal gate drive conditions.
Application Scenarios: This package is chosen for lowest switching loss and highest frequency operation. It is suitable for high-frequency DC-DC converters in point-of-load applications, envelope tracking power supplies in 5G base stations, and precision test equipment.
Application Scenarios: This package is chosen for lowest switching loss and highest frequency operation. It is suitable for high-frequency DC-DC converters in point-of-load applications, envelope tracking power supplies in 5G base stations, and precision test equipment.
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