| Model | AC4D10120H |
|---|---|
| Description | SIC SCHOTTKY DIODES,1200V,10A,TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Gói | TO-247-2 |
| Reverse Voltage (Vrrm) | 1200 V |
| Continuous Forward Current (IF) | 10 A |
| Forward Voltage (VF) | 1.5 V |
| Max Power Dissipation | 153 W |
| Capacitance Charge (QC) | 52 nC |
| Operating Temperature (°C) | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Packing | Tube |
Specifications & Application Scenarios
Specifications: The AC4D10120H is a 1200V, 10A SiC Schottky diode in TO-247-2. Key specs: V_F=1.5V, P_TOT=153W, Q_C=52nC. It offers a balance of voltage, current, and package for 10A designs.
Application Scenarios: Versatile for various 10A applications. Used in EV onboard chargers, telecom power systems, and industrial control power supplies. A high-performance upgrade path.
Application Scenarios: Versatile for various 10A applications. Used in EV onboard chargers, telecom power systems, and industrial control power supplies. A high-performance upgrade path.
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