| Model |
AC4D20120A |
|---|---|
| Description |
SIC SCHOTTKY DIODES,1200V,20A,TO-220-2 |
| Technology |
SiC (Silicon Carbide) Schottky |
| Gói |
TO-220-2 |
| Reverse Voltage (Vrrm) | |
| Continuous Forward Current (IF) | |
| Forward Voltage (VF) |
1.5 V |
| Max Power Dissipation |
250 W |
| Capacitance Charge (QC) |
99 nC |
| Operating Temperature (°C) |
-55°C ~ 175°C |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC4D20120A is a 1200V, 20A SiC Schottky diode in the compact TO-220-2 package. It offers V_F=1.5V, P_TOT=250W, and Q_C=99nC. It brings high-voltage performance to a smaller form factor.
Application Scenarios: For space-constrained high-voltage designs. Used in compact solar optimizers, drone charger circuits, and high-density power modules. Maximizes power density.
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