Model

AC4D20120D

Description

SIC SCHOTTKY DIODES,1200V,20A,TO-247-3

Technology

SiC (Silicon Carbide) Schottky

Gói

TO-247-3

Reverse Voltage (Vrrm)

Forward Voltage (VF)

1.5 V

Max Power Dissipation

352 W

Capacitance Charge (QC)

52 nC

Operating Temperature (°C)

-55°C ~ 175°C

Mounting Type

Through Hole

Specifications & Application Scenarios

Specifications: The AC4D20120D is a 1200V, 20A SiC Schottky diode in TO-247-3. It features V_F=1.5V, P_TOT=352W, and Q_C=52nC. It is built for high-power, high-voltage switching. Application Scenarios: For demanding 20A, 1200V circuits. Ideal in 3-phase PFC units, high-power telecom rectifiers, and motor drives for industrial machinery. Provides efficiency and reliability.

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