| Model | AC4D30120D |
|---|---|
| Description | SIC SCHOTTKY DIODES,1200V,30A,TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Gói | TO-247-3 |
| Reverse Voltage (Vrrm) | 1200 V |
| Continuous Forward Current (IF) | 30 A |
| Forward Voltage (VF) | 1.6 V |
| Max Power Dissipation | 440 W |
| Capacitance Charge (QC) | 77.5 nC |
| Operating Temperature (°C) | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Packing | Tube |
Specifications & Application Scenarios
Specifications: The AC4D30120D is a 1200V, 30A SiC Schottky diode in TO-247-3. Key parameters: V_F=1.6V, P_TOT=440W, Q_C=77.5nC. It offers high current handling with the benefits of SiC technology.
Application Scenarios: Targets high-power applications. Used in EV fast charger modules, high-end server PSUs, and large UPS systems. The high current rating supports high power throughput.
Application Scenarios: Targets high-power applications. Used in EV fast charger modules, high-end server PSUs, and large UPS systems. The high current rating supports high power throughput.
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