| الطراز | AC3M0075120D |
|---|---|
| الوصف | SiC MOSFET N-CH 1200V 33A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| الحزمة | تو-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 33A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +19V, -8V |
| Rds(on) | 75mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 55 nC |
| سعة الإدخال (Ciss) | 1305 pF |
| Max Power Dissipation | 136W |
| Operating Temperature (°C) | -40 ~ 175 |
| نوع التركيب | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0075120D is a 1200V, 33A SiC MOSFET with a 75mΩ on-resistance. It operates with a +19V/-8V gate drive and has a Vgs(th) of 2.5V. The total gate charge is 55nC. Rated for 136W, it operates up to 175°C.
Application Scenarios: This cost-optimized 1200V MOSFET is suitable for solar micro-inverters, active clamp switch in flyback converters, and as a series-pass element in electronic loads.
Application Scenarios: This cost-optimized 1200V MOSFET is suitable for solar micro-inverters, active clamp switch in flyback converters, and as a series-pass element in electronic loads.
المنتجات ذات الصلة
العنوان:：
17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين
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