Model

Description

SiC MOS (Silicon Carbide)AC3M0040120Ki 1200V 57A

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

57A

Drive Voltage

15V

Vgs (Max)

+19V, -8V

Rds On

40mΩ

Vgs(th)

3.8V

Gate Charge (Qg)

94 nC

Input Capacitance (Ciss)

2726 pF

Power Dissipation

242W

Operating Temperature (℃)

Mounting Type

Through Hole

Package

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