| Model |
AC4D20120D |
|---|---|
| Beschreibung |
SIC SCHOTTKY DIODES,1200V,20A,TO-247-3 |
| Technology |
SiC (Silicon Carbide) Schottky |
| Paket |
TO-247-3 |
| Reverse Voltage (Vrrm) | |
| Forward Voltage (VF) |
1.5 V |
| Max Power Dissipation |
352 W |
| Capacitance Charge (QC) |
52 nC |
| Operating Temperature (°C) |
-55°C ~ 175°C |
| Montageart |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC4D20120D is a 1200V, 20A SiC Schottky diode in TO-247-3. It features V_F=1.5V, P_TOT=352W, and Q_C=52nC. It is built for high-power, high-voltage switching.
Application Scenarios: For demanding 20A, 1200V circuits. Ideal in 3-phase PFC units, high-power telecom rectifiers, and motor drives for industrial machinery. Provides efficiency and reliability.
Ähnliche Produkte
ADRESSE：
17F, North Industrial Building, Nr. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-Mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD