WICHTIGSTE PRODUKTE
| APSEMI PN |
APV259AE |
|---|---|
| Schaltung |
1 Form A(SPST-NO) |
| Beschreibung |
SiC SSR RELAY SPST-NO 30mA 1200V, DIP-6 |
| Laststrom |
30mA |
| Montageart |
Through Hole |
| Durchgangswiderstand (Max) |
85Ω |
| Ausgangstyp |
AC, DC |
| Paket |
DIP-6 |
| Verpackung |
Tube |
| Serie |
Photo-MOS-Solid-State-Relais |
| Ausschalten |
20us |
| Einschalten |
250us |
| Spannungseingang |
1.1 ~ 1.5VDC |
| Spannung - Last |
0V~1200V |
Specifications & Application Scenarios
Specifications: The APV259AE is a high-voltage Silicon Carbide (SiC) PhotoMOS SSR in a DIP-6 through-hole package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1200V AC/DC with a 30mA current rating. It has an 85Ω on-state resistance, provides 5000Vrms isolation, and switches with 250μs (turn-on) and a fast 20μs (turn-off) time. It is designed for harsh environments with an operating range of -40°C to 85℃ and is controlled by 1.1-1.5VDC. Application Scenarios: Targeting high-voltage, low-current applications that demand the superior reliability and performance of SiC technology. Ideal for medical equipment like electrosurgical units, high-voltage power supply control and monitoring, industrial insulation testers, photomultiplier tube and CRT anode supplies, and any application where high breakdown voltage, fast switching, and long-term stability at extreme potentials are critical.
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