Model

AC3M0016120K

Beschreibung

SiC MOSFET N-CH 1200V 117A TO-247-4

Serie

Silicon Carbide

FET Type

N-Channel

DrainVoltage(Vdss)

1200V

Current

117A

Drive Voltage

15V

Vgs (Max)

-8V, +19V

Rds On

16mΩ

Vgs(th)

2.9V

Gate Charge (Qg)

216 nC

Input Capacitance (Ciss)

6085 pF

Power Dissipation

555W

Betriebstemperatur (℃)

-40°C ~ 175°C

Montageart

Through Hole

Paket

TO-247-3

Specifications & Application Scenarios

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