| Модель | AC3M0016120K |
|---|---|
| Описание | SiC MOSFET N-CH 1200V 117A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Пакет | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 117A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 16mΩ |
| Vgs(th) | 2.9V |
| Gate Charge (Qg) | 216 nC |
| Input Capacitance (Ciss) | 6085 pF |
| Max Power Dissipation | 555W |
| Operating Temperature (°C) | -40 ~ 175 |
| Тип крепления | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0016120K is a variant of the flagship 1200V/117A SiC MOSFET, featuring the same 16mΩ on-resistance. The listed gate charge is 216nC with a Vgs(th) of 2.9V, and it is rated for 555W. If incorporating a Kelvin source connection, it offers benefits of reduced switching losses and improved gate drive integrity.
Application Scenarios: Targeting applications that require both the highest current handling at 1200V and clean switching performance. It would be suited for the output stage of high-power industrial RF generators, switches in multi-level converters, and advanced motor drives for aerospace/defense.
Application Scenarios: Targeting applications that require both the highest current handling at 1200V and clean switching performance. It would be suited for the output stage of high-power industrial RF generators, switches in multi-level converters, and advanced motor drives for aerospace/defense.
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