| Model |
AC3M0280090D |
|---|---|
| Beschreibung |
SiC MOSFET N-CH 900V 11A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paket |
TO-247-3 |
| Drain to Source Voltage |
900V |
| Continuous Drain Current (ID) |
11A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
320mΩ |
| Vgs(th) |
2.7V |
| Gate Charge (Qg) |
7.7 nC |
| Input Capacitance (Ciss) |
153 pF |
| Max Power Dissipation |
47W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Montageart |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0280090D is a 900V, 11A SiC MOSFET with a 320mΩ on-resistance. It operates with a 15V/-8V gate drive and has a Vgs(th) of 2.7V. Its most notable feature is an ultra-low total gate charge of 7.7nC. Rated for 47W, it operates from -55°C to 150°C.
Application Scenarios: This device is tailored for applications where switching speed is paramount. It is ideal for RF envelope tracking in 5G base stations, switch in high-efficiency Class-E amplifiers, and high-voltage, high-frequency signal generation circuits.
Application Scenarios: This device is tailored for applications where switching speed is paramount. It is ideal for RF envelope tracking in 5G base stations, switch in high-efficiency Class-E amplifiers, and high-voltage, high-frequency signal generation circuits.
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